PART |
Description |
Maker |
A42L2604S-45L A42L2604S-50L A42L2604V-45L A42L2604 |
45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode 50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
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AMIC Technology
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IS42VM32160E IS45SMVM32160E IS42RMVM32160E |
Auto refresh and self refresh
|
Integrated Silicon Solu...
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HM5164805FTT-5 HM5165805FTT-5 HM5164805FTT-6 HM516 |
64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh 64 M EDO DRAM (8-Mword ? 8-bit) 8 k Refresh/4 k Refresh 64 M EDO DRAM (8-Mword 隆驴 8-bit) 8 k Refresh/4 k Refresh
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http:// Elpida Memory
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HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24 POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88% 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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SIEMENS A G SIEMENS AG http:// Siemens Semiconductor G...
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HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24 High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24 4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO)) 4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO)) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG http:// Siemens Semiconductor Group
|
KMM372F1600BK KMM372F1600BS KMM372F1680BK KMM372F1 |
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V 16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic Samsung semiconductor
|
BAP815 |
Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 45ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C; Package: 54-TSOP-II; Features: Real-Time Clock BAP815 - Dioda uniwersalna Non-Volatile Static RAM (nvSRAM); Organization: 256x16; Density: 4MB; Speed: 45ns; Supply Voltage: 5V; Temperature Range: -40° to 85°C
|
Ultra CEMI Electronic Theatre Controls, Inc.
|
M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
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Samsung Electronic
|
IS42SM32100D IS42VM32100D |
Auto refresh and self refresh
|
Integrated Silicon Solu...
|
M366S3253BTS-C75 M366S3253BTS |
32MB x 64 SDRAM DIMM based on 32MB x 8, 4Banks, 8KB Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
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V62C5181024L-45WI V62C5181024L-55WI V62C5181024LL- |
128K x 8 CMOS static RAM, 45ns, low power 128K x 8 CMOS static RAM, 55ns, low power 128K x 8 CMOS static RAM, 45ns, low low power
|
Mosel Vitelic Corp
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